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Microwave assisted Self-propagating High-temperature Synthesis for joining SiC ceramics and SiC/SiC composites by Ni-Al system

机译:微波辅助自展开高温合成,用于通过Ni-Al系统加入SiC陶瓷和SiC / SiC复合材料

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Microwave has been applied to ignite the Self-propagating High-temperature Synthesis (SHS) of compacted Ni-Al mixtures, having 1:1 atomic ratio, in order to join Chemical Vapor Deposition (CVD) SiC ceramics and SiC/SiC composites. The average joint thickness of CVD SiC joint is about 200 μm and the Coefficient of Thermal Expansion (CTE) mismatch between CVD SiC and Ni-Al intermetallic compounds results in a interface bond strength inferior to that of the substrate and joining material; on the other hand, for the SiC/SiC composite joints, as a result of the porosity of SiC/SiC composites, the SHS products readily infiltrated into the pore spaces of the composite, leading to an increased porosity of the joint area and a better lower interface than the upper one. The mechanical strength of the joints has been evaluated by Single-Lap (SL) shear test at room temperature; neither of the ceramic joints nor the composites joint gave satisfactory results, but the ceramic joints reaching a maximum shear strength value of 56MPa exhibited a positive aspect for further experiments.
机译:微波已经应用于点燃压实的Ni-Al混合物的自蔓延高温合成(SHS),具有1:1原子比,以加入化学气相沉积(CVD)SiC陶瓷和SiC / SiC复合材料。 CVD SiC接头的平均关节厚度约为200μm,并且CVD SiC和Ni-Al金属间化合物之间的热膨胀系数(CTE)失配导致界面粘合强度较差的底板和连接材料;另一方面,对于SiC / SiC复合接头,由于SiC / SiC复合材料的孔隙率,SHS产品容易渗入复合材料的孔隙空间,导致联合区域的孔隙率增加和更好较低的界面比上部更低。在室温下通过单圈(SL)剪切试验评估关节的机械强度;陶瓷关节和复合材料都没有得到令人满意的结果,但达到最大剪切强度值56MPa的陶瓷接头显示出用于进一步实验的阳性方面。

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