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Correlation between Electrical and Optical Properties of Tantalum Anodic Oxide and Electron Cyclotron Resonance Etching Studies of E-beam Deposited Ta_2O_5 Films

机译:钽阳极氧化物电气和光学性能与电子束沉积Ta_2O_5膜的电子回旋蚀刻研究的相关性

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The anodicTa_2O_5 films were grown in 5ml/98%H_2SO_4 electrolyte. Discharge currents were collected immediately after growth. The optical properties were studied with a Spectroscopic Ellipsometer, over a wide range of frequencies from the UV to the IR. It was established that films for which the discharge current followed the known "~ -1" power dependence (characteristic of films that can sustain electric fields of MV/cm) have different optical properties as compared to films for which the discharge current is not represented by that function. Etching studies of the e-beam deposited Ta_2O_5 films, combined with reflectance measurements after each etch step, resulted in a shift in the reflectance spectrum as a function of film thickness, d. This empirical f versus d dependence (where f is the frequency corresponding to the reflectance minimum for each d) was used to calculate the energies of the 4d doublet of Ta~(+5) in Ta_2O_5.
机译:Anodicta_2O_5薄膜在5ml / 98%H_2SO_4电解质中生长。在生长后立即收集放电电流。用光谱椭圆仪研究光学性质,在来自UV到IR的宽范围频率上。建立了其中放电电流跟随的已知“〜-1”功率依赖的薄膜(可以维持MV / cm的电场的薄膜的特性)与未示出放电电流的薄膜相比具有不同的光学性质通过该功能。蚀刻E型束沉积Ta_2O_5膜的研究,在每个蚀刻步骤之后结合反射率测量,导致反射光谱作为膜厚度的函数的偏移。这种经验F与D依赖性(其中F是对应于每个D的反射率最小的频率)来计算TA_2O_5中的4D双倍(+5)的电能。

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