Fabrication and Characterization of Transparent Conducting ZnO:Al Films for Organic Optoelectronic Devices

摘要

Al-doped ZnO (ZnO:Al) thin films were deposited on glass substrates by rf magnetron sputtering technique. The effect of discharge power on the structural, optical and electrical characteristics of ZnO: Al films was investigated by X-ray diffraction (XRD), four-probe meter and optical transmission spectroscopy. The results show that the films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The highest figure of merit of 5.58 x 10~(-3) Ω~(-1) is obtained from the film prepared at the discharge power of 200 W. The average optical transmittance in the visible range of the films is over 78.2%.