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Deposition of Intermediate (Barrier) Coatings of Silicon and Germanium on Steel, Titanium or Aluminum Substrates Using Laser Ablation

机译:使用激光烧蚀将硅和锗和锗的中间(屏障)涂层沉积沉积在钢,钛或铝基板上

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The paper presents the results of the first stage of the experimental research of intermediate (barrier) silicon and germanium coating deposition on the substrates not proned to the formation of carbides (steel, titanium, aluminum) by laser ablation. These experiments were carried out using modified YAG-Nd~(3+) solid state laser of LTI-130 type with the wave length of 1064.1 nm. It was shown that the sequence of large numbers of nanosecond pulses which composed the train of laser radiation provided the material ablation under the power of two orders of the magnitude less than that of the single pulse necessary for the ablation process. In the experiments, silicon coatings up to 5 μm in thickness and germanium coatings of 1-3 μm in thickness were produced on substrates from steel, aluminum and titanium. It was determined that the roughness of substrate surface for deposition of intermediate (barrier) coatings had a strong influence on the coating structure. Silicon films on substrate surfaces with the roughness ≤ 10 μm were denser and more homogeneous and looked like amorphous films without a crystal structure. On surfaces with the roughness >20 μm a silicon film had a crystal structure with the size of crystallites about 5 μm. It was shown that unlike the silicon the germanium in the same experimental conditions had the tendency to the formation of films with elements of a crystal structure. Germanium coatings were not homogeneous and consisted of the mixture accumulations of crystallites and amorphous fields.
机译:本文介绍了中间体(屏障)硅和锗涂层沉积的第一阶段的第一阶段,在未扮演的基材上通过激光烧蚀形成碳化物(钢,钛,铝)的基板上。使用LTI-130型改性的YAG-Nd〜(3+)固态激光器进行这些实验,波长为1064.1nm。结果表明,组成的大量纳秒脉冲的序列,其组成了激光辐射的列车,其在幅度的两个订单的功率下提供了材料消融,而不是消融工艺所需的单个脉冲的功率。在实验中,在钢,铝和钛的基板上产生高达5μm的厚度和锗涂层的硅涂层,厚度为1-3μm。确定用于沉积中间(屏障)涂层的基材表面的粗糙度对涂料结构具有很大的影响。粗糙度≤10μm的基板表面上的硅膜是更密集的,更均匀,并且看起来像没有晶体结构的非晶膜。在粗糙度>20μm的表面上,硅膜具有约5μm的微晶尺寸的晶体结构。结果表明,与相同实验条件中的锗不同的锗具有形成具有晶体结构元件的膜的趋势。锗涂层不是均匀的,并由微晶和无定形领域的混合累积组成。

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