DEPOSITION OF AL-DOPED ZINC OXIDE BY DIRECT PULSED LASER RECRYSTALLIZATION AT ROOM TEMPERATURE ON VARIOUS SUBSTRATES FOR SOLAR CELL APPLICATIONS

摘要

In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) are introduced to deposit superior transparent conductive oxide (TCO) layer on low melting point flexible substrates. As an indispensable component of thin film solar cell, TCO layer with a higher quality will improve the overall performance of solar cells. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal electrical and optical properties of AZO on low melting point flexible substrate is challenging. Recently developed direct pulsed laser recrystallization (DPLR) technique is a scalable, economic and fast process for point defects elimination and recrystallization at room temperature.