The spreading of transparent and flexible electronic applications requires cost efficient devices with an adequate performance. In this study we analyse the electrical performance of p-type thin-film transistors (TFTs) with two different cupric oxide (CuO) nanoparticles as channel layer. The fabricated inorganic TFTs were integrated in an inverted coplanar architecture with gold electrodes and a high-k nanocomposite is used as gate dielectric. The different CuO nanoparticles are available in powdered form and in an aqueous dispersion, respectively. The transistors are characterized in terms of their electrical properties.
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