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Selective surface modification of silicon microcantilever sensors with micro/nanostructures

机译:微/纳米结构的硅片微电机传感器的选择性表面改性

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In the field of silicon microcantilever-based physical and chemical sensors, several attempts have been afforded to improve their performances by mostly incorporating micro/nanostructures or coating their surfaces with inorganic and organic sensitive layers [1, 2]. By synthesizing silicon nanowires (SiNWs) directly on silicon cantilevers with a solid-liquid-solid growing mechanism, the yielded SiNWs are unaligned and hardly controlled [1]. Meanwhile, for thin polymer and zeolites layer coating methods, the complexity of attaining uniform and consistent coating layers on the active structures can limit the sensor functionality [2].
机译:在基于硅片的物理和化学传感器的领域中,已经过了几次尝试通过大多数掺入微/纳米结构或用无机和有机敏感层涂覆它们的表面来改善它们的性能[1,2]。通过将硅纳米线(SINWS)直接合成,具有固体液体固体生长机制,产量的SINWs未对准并难以控制[1]。同时,对于薄聚合物和沸石层涂布方法,在有源结构上达到均匀和一致的涂层的复杂性可以限制传感器功能[2]。

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