Printed low-voltage programmable write-once-read-many-memories

摘要

Printed low-voltage programmable (<; 6 V) write-once-read-many (WORM) memories can be utilized in low-bit count and low-complexity printed electronic systems powered by printed batteries. Such WORM memories can be operated as anti-fuses based on electrical sintering of Ag nanoparticles or as fuses based on breaking of a printed Ag conductor of sub-μm cross-sectional area. In this paper, we present initial results on fuse-type WORM memories fabricated with reverse offset printing that can allow narrow line width (~3 μm) with low variation in the cross-sectional area of the bits.