Lower metal etching rate chemicals system for high reliability device TSV without metal damage

摘要

We propose new type chemical wet cleaning process of metal layer for high reliability device and TSV process. Here we study our new type novel chemicals to obtain lower metal etching rate at photo resist developing & stripping process, PI film developing and TSV via cleaning process application. And we found out this chemical system can remove fluoride contamination & residue at RIE, dry etching & plasma treatment period with lower metal layer etching rate & without damage.