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Preparation and Microstructure of Pressureless Sintered Si_2ON_2-SiC Ceramic

机译:无压烧结Si_2On_2-SiC陶瓷的制备和微观结构

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This paper introduces Si_2ON_2-SiC ceramic fabricated by pressureless sintering method and studies the effect of additives, nitriding temperatures on bulk density, porosity, phase composition and microstructure. It is discovered that additives MgO, CeO_2 can increase the densities of Si_2ON_2-SiC ceramic apparently, and MgO additive has a better effect than CeO_2. Nitriding temperature also is an important factor. The bulk density of the specimen with MgO additive reaches maximum at 1.91 g/cm~3 when sintered at 1450 °C, and the bulk density of specimen with CeO_2 additive is 1.86 g/cm~3 at the same condition while the bulk density of the specimen without additive is only 1.75 g/cm~3. The X-ray diffraction and scanning electron microscopy of the specimens show that the amount of Si_2N_2O increase with the sintering temperature increase. But when the temperature is higher than 1500 °C the Si_2ON_2 grains will decompose into Si_3N_4, and Si_2ON_2 will vanish at 1550 °C.
机译:本文介绍了无压烧结方法制造的Si_2on_2-SiC陶瓷,并研究添加剂,氮化温度对散装密度,孔隙率,相组成和微观结构的影响。可以发现添加剂MgO,CeO_2可以显然增加Si_2on_2-SiC陶瓷的密度,而MgO添加剂比CEO_2具有更好的效果。氮化温度也是一个重要因素。当在1450℃下烧结时,具有MgO添加剂的样品的堆积密度在1.91g / cm〜3时达到1.91g / cm〜3的最大值,并且具有CEO_2添加剂的样品的堆积密度在同一条件下为1.86g / cm〜3,而散装密度没有添加剂的样品仅为1.75g / cm〜3。样品的X射线衍射和扫描电子显微镜表明,Si_2N_2O的量随烧结温度的增加而增加。但是,当温度高于1500℃时,Si_2On_2晶粒将分解为Si_3N_4,并且Si_2on_2将在1550℃下消失。

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