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Metrology and Characterization Challenges for Emerging Research Materials and Devices

机译:新兴研究材料和设备的计量和特征挑战

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The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g., spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. Additionally, characterization is needed to verify that the materials and their interfaces have been fabricated with required quality and performance. New materials and processes are also needed to extend lithography, interconnects, and assembly and packaging, and metrology is needed to verify and improve functional performance. While directed self assembly is a candidate for extending lithography, metrology is needed to characterize defect densities of these thin polymers over large areas to determine whether it will be possible to achieve ITRS defect densities of <0.01 cm~(-2). For extending copper interconnects, metrology to support characterization is needed to evaluate the effectiveness of ultrathin diffusion barriers down to 1 nm in thickness. For more advanced constructs, such as carbon nanotubes or graphene for interconnects and vias, metrology is needed to evaluate the contact resistance and quality of materials deposited into vias and interconnects. Specifically, for carbon nanotubes (CNTs) metrology is needed to determine their density and whether growth factors will limit this density. Furthermore, as graphene or CNTs are deposited on other materials, it is important to determine whether their performance will be modified by interfacing to these new substrates. In assembly and packaging, materials are needed to enable a thermal hierarchy of assembly temperatures, low stress on the ICs, and spreading of heat generated between the ICs. The challenge for assembly materials is to be able to simultaneously satisfy required thermal conductivity, modulus, hardness, adhesion, electrical resistivity, moisture resistance, and other functional properties. Nanosolders offer the possibility of establishing a thermal hierarchy for assembly, but the resulting structure and reliability of these solders must be verified. The critical challenge is to develop characterization techniques that can determine whether it is possible for the emerging materials and devices to achieve their most important performance limitations and be viable candidates for progressing to process or circuit development.
机译:半导体(ITRS)新兴研究材料(ERM)和新兴研究设备(ERD)技术工作组的国际技术路线图已经确定了可以实现未来集成电路(IC)技术的密度和性能的持续增加的材料和设备必须克服;但是,这将需要计量和表征的显着进展,以实现进展。新的存储器设备及其超出CMOS逻辑器件使用新的状态变量(例如,旋转,氧化还原状态等)和计量和表征技术来验证其切换机制和可伸缩性,并实现这些设备的操作的改进。同样,需要新的材料和过程来启用这些新设备。此外,需要表征以验证材料及其界面是否已采用所需的质量和性能制造。还需要新的材料和过程来延伸光刻,互连和组装和包装,并且需要计量来验证和改善功能性能。虽然定向自组装是用于延伸光刻的候选者,但是需要在大区域上表征这些薄聚合物的缺陷密度,以确定是否可以实现<0.01cm〜(-2)的ITRS缺陷密度。对于延伸铜互连,需要支撑表征的计量来评估厚度为1nm的超薄扩散屏障的有效性。对于更高级的构造,例如用于互连和通孔的碳纳米管或石墨烯,需要评估沉积在通孔和互连中的材料的接触电阻和质量。具体地,对于所需的碳纳米管(CNT)测量来确定它们的密度以及生长因子是否会限制这种密度。此外,随着石墨烯或CNT沉积在其他材料上,重要的是要确定它们的性能是否将通过与这些新的基材接口来修改。在组装和包装中,需要材料来使得能量温度的热层次,IC上的低应力,以及在IC之间产生的热量。组装材料的挑战是能够同时满足所需的导热率,模量,硬度,粘附,电阻率,防潮性和其他功能性质。纳米玻璃器提供建立装配热层次结构的可能性,但必须验证所得到的结构和这些焊料的可靠性。临界挑战是开发表征技术,可以确定新出现的材料和器件是否有可能实现最重要的性能限制,并且是用于进程到过程或电路开发的可行候选者。

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