High Resolution Multiwavelength μ-Raman Spectroscopy for Nanoelectronic Material Characterization Applications

摘要

As a non-contact, in-line monitoring technique for stress/strain and crystallinity of Si, epitaxial Si_(1-x)Ge_x/Si and implanted Si, a polychromator-based, high resolution, multi-wavelength Raman spectroscopy system was evaluated. Three major spectral lines at 457.9, 488.0 and 514.5 nm from a multi-wavelength Ar ion laser were used as the excitation source for virtual depth profiling of material properties. Si stress/strain and Ge content were accurately measured from ultra thin (>5 nm) epitaxial Si_(1-x)Ge_x/Si. Crystalline stress value of C-implanted Si and stress change before and after annealing were also successfully characterized. High resolution, multi-wavelength μ-Raman spectroscopy is shown to be a very promising non-contact, in-line characterization technique for nanoelectronic materials.