We have developed a 3D MOSCAP to characterize sidewall dielectric electrical performance to help gauge the quality and reliability of non-planar devices, such as FinFETs. The 3D MOSCAP can be used for process and materials development for high-K metal gate, spacer, and liner applications for 3D monolithic integration for future generation devices. In comparison, a traditional 2D (planar) MOSCAP is for characterization of dielectrics in the horizontal plane only. This study used different oxides as examples to compare the sidewall dielectric quality and electrical performance, and compare with that of oxide on a horizontal surface. A data analysis methodology is developed and demonstrated to extract sidewall dielectric properties from measured electrical results.
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机译：我们开发了一种3D Moscap，以表征侧壁介质电气性能，以帮助衡量非平面装置的质量和可靠性，例如FinFET。 3D Moscap可用于高k金属栅极，垫片和衬里应用的过程和材料开发，用于将来一代设备的3D单片集成。相比之下，传统的2D（平面）Moscap仅用于表征水平平面中的电介质。该研究使用不同的氧化物作为比较侧壁介电质量和电性能的示例，并与水平表面上的氧化物的比较。开发数据分析方法，并证明从测量的电气结果提取侧壁电介质特性。
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