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Electronic structures and optical properties of Culn_(1-x)Ga_xSe_2 by first-principle calculations

机译:通过第一原理计算Culn_(1-x)Ga_xse_2的电子结构和光学特性

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First-principle calculations on the electronic structures and optical properties of Culn_(1-x)Ga_xSe_2(x=0, 0.25, 0.5, 0.75 and 1) reveal that Culn_(1-x)Ga_xSe_2 are small band gap materials and the ground state is stabiles from x=0 to 1 while the band-gap of the quaternary compound widen, all of that are in good agreement with the experimental results. We find that the obviously double peak structure of the imaginary of dielectric function centered about from 0.9 to 5.0 while a distinct peak appears at about 2.2eV and a smooth increasing with another peak appearing at about 5.5eV for the different content of Ga appearing in the absorption spectrum, all of which indicate the different band gap for the transition.
机译:关于CULN_(1-X)GA_XSE_2(x = 0,0.25,0.5,0.75和1)的电子结构和光学性质的第一原理计算,揭示了CULN_(1-x)GA_XSE_2是小带隙材料和地态与x = 0〜1稳定,同时季化合物的带间隙扩大,所有这些都与实验结果很好。我们发现,介电函数的虚拟峰值结构为约0.9至5.0,而不同的峰值出现在约2.2ev约2.2ev,并且在约5.5ev出现在大约5.5ev的另一个峰值下出现的峰值的平滑增加吸收光谱,所有这些都表示过渡的不同带隙。

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