The study of contamination and coarsening in sintering silicon powder

摘要

The goal of this study was to investigate the sintering mechanism of Si powder, with the particle size of Si, sintering temperature, and sintering environment as the variables. The use of a crucible, by controlling the vapor atmosphere at certain temperatures, coarsened the silicon powder. Experiment of data show that by avoiding the vapor pressure of crucible a sintering at 1380°C causes the silicon powder easily to sinter to high density, without the use of any doping addition. Therefore it is to our advantage to discover the microstructure phenomenon of silicon powder and reveal its nature. The crystalline structure of the heat-treated samples was studied with Scanning electron microscopy (SEM) to explain the resultant of contamination that causes the densification.