Effects of Na precursor layer deposited on Mo substrate about (In,Ga)_2Se_3 and CIGS layers

摘要

Na external doping using Na_2S precursors on Mo/Coming glass substrate is one of the simplest doping methods. But the method affects both surface morphology and preferred orientation of (In,Ga)_2Se_3 and CIGS films, especially when the thickness was increased. The textures of CIGS films prepared with 3-stage process appear to be inherited from the textures of the (In,Ga)_2Se_3 films deposited during the first stage, it can be assumed that the growth of (In,Ga)_2Se_3 films were modified with Na_2S precursors. As the thickness of Na precursor was increased, surface morphology of (In,Ga)_2Se_3 films was more smooth than that of the films which had thin Na precursor. And CIGS thin films made by these (In,Ga)_2Se_3 films showed that (112) orientation was stronger than (220/204) orientation. And also it was investigated there is a close relation about the morphology and the roughness between (In,Ga)_2Se_3 and CIGS films by AFM.