Extraction of structural information from thermal impedance measurements in time domain

摘要

Thermal impedance measurement of semiconductor devices is one of the standard and well established methods for their characterization. From such measurements one can derive not only behavioral information in the form of graphs or models for thermal simulation, but also structural information about the thermal path involved, from source to sink, that can be very useful in device assembly process characterization and control. Extraction of structural information, however, usually requires quite an involved processing of measured data with all the associated calculation burden and numerical errors. This work proposes a method to extract structural information from measured data in a straightforward way, with very few and elementary calculations, thus providing a useful analysis tool.