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Investigation of plasticity in silicon nanowires by molecular dynamics simulations

机译:分子动力学模拟硅纳米线塑性度研究

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We have performed molecular dynamics simulations on silicon nanowires (Si-NW) with [001] axis and square section. The forces are modeled by well-tested semi-empirical potentials. First we investigated the edge reconstruction of Si nanowires. Then, we studied the behavior of the NW when submitted to compression stresses along its axis. At low temperature (300K), we observed the formation of dislocation loops with a Burgers vector 1/2 [10-1]. These dislocations slip in the unexpected {101} planes having the largest Schmid factor.
机译:我们已经在硅纳米线(Si-NW)上进行了分子动力学模拟,具有轴和方形部分。该力由经过良好测试的半经验潜力进行建模。首先,我们研究了Si纳米线的边缘重建。然后,我们在沿其轴线提交到压缩应力时,研究了NW的行为。在低温(300k),我们观察到突发脉冲环的形成脱位环1/2 [10-1]。这些脱位在具有最大的施密因子的意外{101}飞机中滑动。

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