Influence of Substrate Temperature on Properties of Transition Materials from Amorphous to Microcrystalline Silicon Prepared by VHF-PECVD

摘要

Thin films of amorphous/microcrystalline silicon transition zone prepared at different substrate temperature by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) have been studied in this paper. The influence of substrate temperature on microstructure, photoelectric properties and growth of these materials have been investigated. The results show that in a certain extent with the increase of substrate temperature, the structure of material evaluated from amorphous to microcrystalline, the deposition rate and dark conductivity, the photosensitivity had been improved. However, the optical conductivity had been reduced. The optimized substrate temperature for thin films deposition under our current growth system is about 240°C, at which deposition rate can reach 0.6 nm s.