Structure and photoelectric properties of Dy doped CdS polycrystalline thin films

摘要

Using chemical bath deposition (CBD) deposited CdS thin films for two times and prepared CdS films contained different thickness Dy-doping layer by connecting using the vacuum electron beam evaporation method, then studied the structure, surface morphology, optical and electrical properties of the films. The results show that no-doped CdS films is the cubic structure and preferentially oriented in the (111) directions. Its conductive type is N type. After Dy doping the CdS thin films is mixed structure by cubic and hexagonal phase, the conductive type is still N type; the uniformity and compactness of the films are improved. At the same time, the proportion of Cd and S atoms in Dy-doping films are more close to the stoichiometric ratio. Dy-doping can also reduce the resistivity of the films, result in an increasing of carrier concentration and improve the transmittance in the visible region.