Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices

摘要

The electrical and optical characteristics of indium doped Se_2Sb_2Te_6 phase-change alloy are studied. It is found that adding indium to Se_2Sb_2Te_6 alloy (In_(0.3)Se_2Sb_2Te_6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitance-voltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.