High bandwidth junction temperature measurement provides a key signal for active thermal control to improve reliability of power electronics. Recently developed isolated techniques to estimate junction temperature from the decay of turn-on ringing depending on circuit properties are not well documented in existing circuit models. This paper focuses on how to develop circuit models that are suitable for high bandwidth estimation using the decay of turn-on ringing. The novelty of this paper is in how it models those parasitic effects that enable prediction of the decay of the output ringing waveform. Similar modeling techniques can be used to capture EMI characteristics. Modeling results focus on parasitic effects of MOSFETs and passive components In a boost converter. Simulation and experimental results are compared to validate the methodology.
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