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Properties Simulation of Compact Multimode Interference 1x3Coupler in SOI

机译:SOI中紧凑型多模干扰1x3耦合器的性能仿真

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Optical waveguide coupler is the basic component in integration optics. For reducing the scale of the 1 x 3 MMI coupler in SOI, several kinds novel structure couplers are analyzed. The structure factor changes are simulated by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). In the simulation, the rib waveguide with large cross-section is used, and the width of MMI region is designed to be 100pm while the height and the etching depth is 10pm and 4pm, respectively. Symmetric interference structure is applied in the device. The width of MMI region is changed in horizontal direction from general straight shape to linear, exponential or parabolically taper shape, and the etching depth of MMI region is increased in perpendicular direction. The simulation results are as follows. The lengths of the device with the linear, exponential or parabolically taper structure are reduced between 30% to 50%, compared with that of conventional structure, but the device performance factors, including the excess loss and the uniformity, are both deteriorated. The excess loss and the length of deeply-etched MMI coupler are both better than conventional structure ones, and the uniformity is similar, but the length of the device is reduced only about 5% while the etching depth is increased 2pm. Moreover, the optimized methods of two different directions are combined in the simulation. Deeply-etched linear tapered MMI coupler shows that the length is reduced about 42%, the excess loss is increased 0.32dB, the uniformity is increased 0.1 dB. Deeply-etched parabolically tapered MMI coupler shows that the length is reduced about 52%, the excess loss is increased 0.81dB, the uniformity is increased 0.01 dB. Deeply-etched exponential tapered MMI coupler shows that the length is reduced about 46%, the excess loss is increased 0.47dB, the uniformity is increased 0.003dB. The effects of waveguide structure parameters and surroundings temperature on the excess loss of this coupler are analyzed.
机译:光波导耦合器是集成光学元件的基本组件。为了减少SOI中1 x 3 MMI耦合器的秤,分析了几种新型结构耦合器。通过有效索引方法(EIM)和二维光束传播方法(2D-BPM)模拟结构因子变化。在模拟中,使用具有大横截面的肋波导,并且MMI区域的宽度设计为100pm,而高度和蚀刻深度分别为10pm和4pm。在设备中应用对称干扰结构。 MMI区域的宽度在水平方向上从一般的直线形状改变为线性,指数或抛物线锥形,并且MMI区域的蚀刻深度在垂直方向上增加。仿真结果如下。与常规结构相比,具有线性,指数或柱骨结构的装置的长度在30%至50%之间减小,但是设备性能因素,包括过量损失和均匀性,都劣化。过量损失和深度蚀刻的MMI耦合器的长度均比常规结构更好,并且均匀性相似,但是装置的长度仅减小约5%,而蚀刻深度增加了下午2点。此外,两种不同方向的优化方法在模拟中组合。深度蚀刻的线性锥形MMI耦合器表明,长度降低约42%,过量损耗增加0.32dB,均匀性增加0.1dB。深度蚀刻的抛物线上锥形MMI耦合器表明,长度降低约52%,过量损耗增加0.81dB,均匀性增加0.01 dB。深度蚀刻的指数锥形MMI耦合器表明,长度降低约46%,过量损耗增加0.47dB,均匀性增加0.003dB。分析了波导结构参数和周围环境对该耦合器过量损失的影响。

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