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Magnetic and structural investigation of growth induced magnetic anisotropies in Fe_(50)Co_(50) thin films

机译:Fe_(50)CO_(50)薄膜中生长诱导磁各向异性磁各向异性的磁性和结构调查

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In this paper, we. investigate the magnetic properties of Fe_(50)Co_(50) polycrystalline thin films, grown by dc-magnetron sputtering, with thickness (t) ranging from 2.5 nm up to 100 nm. We focused on the magnetic properties of the samples to highlight the effects of possible intrinsic stress that may develop during growth, and their dependence on film thickness. Indeed, during film deposition, due to the growth technique and growth conditions, a metallic film may display an intrinsic compressive or tensile stress. In our case, due to the Fe_(50)C_(50) magnetolastic properties, this stress may in its turn promote the development of magnetic anisotropies. Samples magnetic properties were monitored with a SQUID magnetometer and a magneto-optic Kerr effect apparatus, using both an in-plane and an out-of-plane magnetic field. Magnetoresistance measurements were collected, as well, to further investigate the magnetic behavior of the samples. Indications about the presence of intrinsic stress were obtained accessing samples curvature with an optical profilometer. For t ≤ 20 nm, the shape of the in-plane magnetization loops is squared and coercivity increases with t, possibly due to fact that, for small t values, the grain size grows with t. The magnetoresistive response is anisotropic in character. For t > 20 nm, coercivity smoothly decreases, the approach to saturation gets slower and the shape of the whole loop gets less and less squared. The magnetoresistive effect becomes almost isotropic and its intensity increases of about one order of magnitude. These results suggest that the magnetization reorientation process changes for t > 20 nm, and are in agreement with the progressive development of an out-of-plane easy axis. This hypothesis is substantiated by profilometric analysis that reveals the presence of an in-plane compressive stress.
机译:在本文中,我们。研究由DC-磁控溅射生长的Fe_(50)CO_(50)多晶薄膜的磁性,厚度(t)为2.5nm,高达100nm。我们专注于样品的磁性,以突出可能在生长期间产生的特性应力的效果,以及它们对膜厚度的依赖性。实际上,在薄膜沉积期间,由于生长技术和生长条件,金属膜可以显示内在的压缩或拉伸应力。在我们的情况下,由于Fe_(50)C_(50)磁性弹性性能,这种应力可以在其转弯时促进磁各向异性的发展。用鱿鱼磁力计和磁光克尔效应装置监测样品磁性,使用平面内和外平面磁场。还收集磁阻测量,进一步研究样品的磁力行为。获得关于在具有光学型仪的样品曲率的基因压应力存在的适应症。对于T≤20nm,平面内磁化环的形状是平方的,并且矫顽力随着T的情况而增加,可能是因为对于小的T值,晶粒尺寸随T而增长。磁阻反应是各向异性的性质。对于T> 20nm,矫顽力平滑地降低,饱和的方法变得更慢,整个循环的形状越来越小。磁阻效应变为几乎各向同性,其强度增加约一个数量级。这些结果表明,磁化重新定向过程变化为20nm,并且与平面外容易轴的逐步开发一致。该假设由轮廓测量分析证实,揭示了面内压缩应力的存在。

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