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Synthesis and Characterization of Cu-doped ZnO Film in Nanowire like Morphology Using Low Temperature Self-Catalytic Vapor-Liquid-Solid (VLS) Method

机译:低温自催化气相 - 固 - 固体(VLS)法的纳米线中Cu掺杂ZnO膜的合成与表征

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Cu-doped ZnO film in nanowire structure is synthesized by a closed space flux sublimation and periodic oxidation method at ~300°C over Si substrate. Oxidative process controlled self-catalytic VLS mechanism is proposed for the film growth. X-ray diffraction pattern establishes that Cu-doped ZnO nanowires retain the crystallite structure of the wurtzite ZnO. TEM studies indicate single crystal character of the Cu-doped ZnO nanowires. Optical absorption analysis of Cu-doped ZnO nanowires defines two direct energy band gaps. The low energy band gap at 3.2eV is intrinsic to the Cu-doped ZnO material. The higher energy band gap at 3.5eV is attributed to the nanosize, mediated by strong forward scattering of light from the nanowires. Sharp photoluminescence in Cu-doped ZnO corresponding to near bandgap free exciton emission is observed and a redshift of ~0.07 eV is consistent with the effect of Cu-doping. The visible emission band in both ZnO and Cu-doped ZnO shows a broad green emission band with Cu-substitution shifting the maximum visible luminescence towards the higher energy side.
机译:纳米线结构中的Cu掺杂的ZnO膜通过闭合空间助焊剂升华合成,在〜300℃上通过Si衬底合成。提出了氧化过程控制的自催化VLS机理,用于薄膜生长。 X射线衍射图案确定Cu掺杂的ZnO纳米线保留紫硝钛矿ZnO的微晶结构。 TEM研究表示Cu掺杂ZnO纳米线的单晶特性。 Cu掺杂ZnO纳米线的光学吸收分析定义了两个直接能带间隙。 3.2EV的低能量带隙是Cu掺杂ZnO材料的内在型。 3.5EV的较高能带隙归因于纳米型,通过来自纳米线的光的强向散射介导。观察到对应于带隙接近的Cu掺杂ZnO的尖锐光致发光,并且〜0.07eV的红移〜0.07eV与Cu掺杂的影响一致。 ZnO和Cu掺杂ZnO中的可见发射带示出了具有Cu - 取代的宽的绿色发射带,将最大可见发光朝向更高的能量侧移位。

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