Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers

摘要

We have investigated an influence of positive polarization charges generated at an interface between GaN barrier/p-AlGaN EB (Electron Blocking) layer in a blue-LED. Simulation results suggested that such polarization charges caused an electron overflow from QWs. The simulation results also indicated that sufficient acceptor doping at the interface could neutralize the positive polarization charges and suppress the electron overflow. We then demonstrated the electron overflow caused by the positive polarization charges and its suppression with sufficient Mg doping at the interface by monitoring emissions from an additional second QW inserted between the p-EB layer and the p-GaN layer. Finally we conclude that the contribution of the electron overflow is not significant for the efficiency droop in blue-LEDs.