The Au-Si liquid phase was obtained by melting the Si surface via Au-Si eutectic reaction, which contributed to the formation of semiconducting iron disilicide (β-FeSi_2), on Au-coated Si(100) substrates. By coating a substrate with an Au layer of 60 nm or more, the Au-Si liquid phase covered the entire Si substrate surface, and single-phase β-FeSi_2 was grown on Si(100) substrates. A clear photoluminescence spectrum of β-FeSi_2 indicated the formation of high-quality crystals with a low density of the non-radiative recombination center in the grains.
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