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Time-of-Flight Technique Limits of Applicability for Thin-Films of II-Conjugated Polymers

机译:用于II缀合聚合物的薄膜的适用性的飞行时间限制

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Time of flight (ToF) is the most straightforward technique to determine polymeric semiconductor mobility for electronic applications. We demonstrate ToF limits of applicability to amorphous PPV derivatives, such as poly[2-methoxy-5-(3',7'dimethylloctyloxy)-1-4-phenylene vinylene] (MDMO-PPV) and poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1-4-phenylene vinylene] (MEH-PPV), and polycrystalline poly(3-hexylthiophene) (P3HT). Hole and electron mobility (μ) in submicrometric films (200 - 500 nm) is overestimated compared to casted layers, due to reduced absorption capability, which is confirmed by Charge Extraction by Linearly Increasing Voltage (CELIV) measurements. Charge transport properties in nanometric films, such as for Field-Effect Transistors (FET), can not be studied by current-mode ToF. Hole mobility of ca. 10~(-5) cm~2/Vs with Poole-Frenkel behavior for PPV derivatives and 10~(-3) cm~2/Vs for P3HT is at least one order of magnitude higher than ToF results.
机译:飞行时间(TOF)是确定电子应用的聚合物半导体移动性最直接的技术。我们证明了对非晶PPV衍生物的适用性的限制,例如聚[2-甲氧基-5-(3',7',7',7',7',7',7',苯基乙烯基)(MDMO-PPV)和聚[2-甲氧基-5 - (2'-乙基 - 己氧基)-1-4-亚苯基乙烯基](MeH-PPV)和多晶聚(3-己基噻吩)(P3HT)。与浇铸层相比,潜水膜(200 - 500nm)中的孔和电子迁移率(μ)升高,由于减少的吸收能力,通过线性增加电压(Celiv)测量,通过电荷提取确认。纳米膜中的电荷运输性能,例如用于场效应晶体管(FET),不能通过电流模式TOF研究。 CA的空穴移动性。对于PPV衍生物的PoOle-Frenkel行为,10〜( - 5)Cm〜2 / Vs,P3ht的10〜(-3)cm〜2 / vs的比率至少比TOF结果高出一个数量级。

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