A new DC-temperature model for a diode bolometer based on SOI-pin-diode test structures

摘要

Different models have been proposed for modeling the IV-characteristics of diodes. In this paper we present a simple model, which describes both the IV- and the temperature characteristics of a SOI-pin-diode and can be used for different diodes types. It is well known that the DC-characteristics of a diode can be approximated by the simple Shockley-equation. However, when a more exact modelling of device parameters is needed, for example for a microbolometer based on a diode, deviations from the simple exponential behaviour have to be taken into account. These additional effects usually depend on the operating point of the diode and can be included by allowing the ideality factor to vary with the applied operating voltage.