In this work, the authors discuss the design of two low noise amplifiers (LNA) based on 1µm gate-length pHEMT InP transistors and using two different topologies. Designed for radio astronomy applications, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB of gain and 0.63dB of noise figure. The two amplifiers exhibit an input 1dB compression point of −22dBm and −26dBm respectively, and a third order input intercept point of −10dBm and −5dBm, respectively.
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