Modeling study for developing CdZnTe(CdSe)/CIGS tandem solarcells

摘要

Based on Crosslight APSYS, single junction ZnTe/CdSe, CdZnTe/CdSe and CIGS/CdS solar cells as well as CdZnTe(CdSe)/CIGS tandem cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves are presented. The results are discussed with respect to the interface recombination velocity and the related material defect trap states for ZnTe/CdSe single junction solar cells and the top TCO layer affinity for tandem cells. The projected efficiency obtained is 28% for one of the modeled two-terminal tandem cells. The modeling results give possible clues for developing CdZnTe(CdSe)/CIGS tandem solar cells with increased efficiency.