A new laser patterning technologyfor low cost poly-Si thin film solar cells

摘要

A new laser scribing scheme for poly-Si based thin film solar cell is proposed. This technology consists of 1) simultaneous removal of underlying TCO and poly-Si film, 2) electrical isolation by resin coating using inkjet and 3)selective top electrode removal by laser ablation of photoresist mask layer followed by chemical etching. Process defects such as crack and parasitic melting can be eliminated by proposed patterning technology. This process can be highly cost-effective because less laser patterning steps are required and less area for series interconnection is needed. Poly-Si thin film solar cell was successfully fabricated and showed 7.4% of conversion efficiency.