In this work a micro-optoelectronic emitter-receiver-device with integrated Vertical Cavity Surface Emitting Laser (VCSEL) is presented. This arrangement is based on a substrate of silicon with 50 mm~2 and integrated photodiodes. Emitter and receiver are situated in one plane. The optical axis of the VCSEL (850 nm) is arranged vertically to the plane of the photodiodes. In addition, the emitter is placed centrally to the detectors. In the emitter-receiver-device a ray shaping micro-optic is also included. The ray shaping is designed in such a way that parasitic rays developing on an absorber plane which is placed opposite from the emitter-receiver-device do not reach the receiver. This occurs in the manner that the light leaves the device in the form of a hollow cone. In this work the setup of the emitter-receiver-device is presented. Furthermore, we report about the variation of the distance between the laser and the micro-optics. There are different optima for the efficiency in dependence on the laser current. Also the angle of deflexion changes with the variation of the named distance. Furthermore, we report about the internal cross talk of the developed emitter-receiver- device. One application of such a device lies in the determination of the particle concentrations in a fluid or in a gas. With the device we measure only the generated scattered light. In this case it is favourable to block as most primary light as possible. The developed ray shaping is a good way to do this. An extended report about the construction of a measuring cell according to the sensor is given in.
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