We have studied the surface modifications of silicon nanowires (SiNWs) by grafting of organic molecules via Si-C covalent bonds. SiNWs were prepared by thermal evaporation of SiO powders under the H_2/Ar atmosphere. Transmission electron microscope observation revealed that SiNWs with a diameter of 50 ~ 100 nm were synthesized and consisted of the single-crystalline Si core with Si oxide sheath. Perfruoro-octylethylene was covalently anchored to the surface of SiNWs by wet process and electrical properties of SiNWs were measured. Modified SiNWs showed a p-type semiconducting behavior. It was presumed that this effect was caused by the charge transfer between the SiNWs and the molecules. The surface modification with organic molecules is a useful method for controlling electronic characteristics in SiNWs.
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