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Grafting of Organic Molecules on Silicon Nanowires

机译:硅纳米线有机分子的接枝

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We have studied the surface modifications of silicon nanowires (SiNWs) by grafting of organic molecules via Si-C covalent bonds. SiNWs were prepared by thermal evaporation of SiO powders under the H_2/Ar atmosphere. Transmission electron microscope observation revealed that SiNWs with a diameter of 50 ~ 100 nm were synthesized and consisted of the single-crystalline Si core with Si oxide sheath. Perfruoro-octylethylene was covalently anchored to the surface of SiNWs by wet process and electrical properties of SiNWs were measured. Modified SiNWs showed a p-type semiconducting behavior. It was presumed that this effect was caused by the charge transfer between the SiNWs and the molecules. The surface modification with organic molecules is a useful method for controlling electronic characteristics in SiNWs.
机译:我们通过通过Si-C共价键接枝有机分子来研究硅纳米线(SINW)的表面修饰。通过在H_2 / AR气氛下通过SiO粉末热蒸发来制备Sinws。透射电子显微镜观察显示,直径为50〜100nm的SinW被合成并由用Si氧化物护套的单晶Si芯组成。通过湿法共价锚固到SINWS的表面上,测量SINWS的电性能。修改的Sinws显示了p型半导体行为。推测,这种效果是由SINWS和分子之间的电荷转移引起的。具有有机分子的表面改性是控制SINWS中电子特性的有用方法。

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