Study of the thermal-induced intensity balanced Nd:GdVO_4 microchip dual-frequency laser

摘要

The intensity balance ratio (IBR) tuning mechanism of Nd:GdVO_4 monolithic microchip dual-frequency laser (DFL) is presented. The intensity balanced DFL signals are obtained by precisely controlling the heat sink temperature of the Nd:GdVO_4 crystal. In experiments, the DFL signal with frequency separation at 64 GHz and IBR above 0.99 is realized with the temperature at 47.6°C. The other balanced intensity distribution can be reached at -0.9°C before mode hopping. Moreover, utilizing the fluorescence spectrum and the intensity balance points of Nd:GdVO_4 DFL, we obtaine the temperature difference between internal and external of Nd:GdVO_4 crystal ΔT = 24.0°C.