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Modification of Cell Microstructure and Compositions for High and Stable Performance of Low-temperature SOFCs

机译:细胞微观结构的改性和低温SOFC的高稳定性能

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High ohmic resistance and high electrode overpotentials are the main obstacles for the development of low temperature SOFCs (LT-SOFCs). In this work, we demonstrate three approaches to obtain significantly improved cell performance for anode-supported cell (ASC) at an operating temperature of 600°C. First, La_(0.6)Sr_(0.4)CoO3 (LSC) has been introduced as cathode material aiming for the reduction of the electrode polarization resistance. Second, thin and dense CGO barrier layers manufactured by physical vapor deposition technique (PVD) and reactive spray deposition technology (RSDT) have been applied between the cathode and electrolyte to diminish the ohmic losses. For comparison, a CGO barrier layer prepared by screen printing has been included. The third one is the modification of the manufacturing process of the anode substrate, aiming for controlled microstructure with high porosity that leads to reduced gas diffusion resistance. These three modification steps resulted in significant improvement of cell performance. Approximately 75% higher maximum power density has been obtained at 600°C.
机译:高欧姆电阻和高电极过电位是用于开发低温SOFC(LT-SOFC)的主要障碍。在这项工作中,我们证明了三种方法,以在600℃的工作温度下获得阳极支持的电池(ASC)的显着改善的细胞性能。首先,LA_(0.6)SR_(0.4)COO3(LSC)被引入为旨在减小电极偏振电阻的阴极材料。通过物理气相沉积技术(PVD)制造的第二,薄型和致密的CGO阻挡层和反应性喷雾沉积技术(RSDT)在阴极和电解质之间施加,以减小欧姆损失。为了比较,已经包括丝网印刷制备的CGO阻隔层。第三个是修改阳极基板的制造过程,旨在具有高孔隙率的控制微观结构,导致降低气体扩散抗性。这三个修改步骤导致细胞性能的显着提高。在600℃下获得了大约75%的最大功率密度。

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