Ultra-low RESET current RRAM device by side-RESET operation method

摘要

Resistive switching memory with low switching current is critical for low power application. In this work, we successfully demonstrated a four-terminal RRAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. Therefore, during RESET process, no current flows through the filaments, leading to an ultra-low switching current.