Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling

摘要

A SiGe HBT low-noise amplifier (LNA) for UWB application is presented. According to the analysis for noise of common base transistor, noise canceling structure for SiGe HBT is proposed to reduce the noise arising from common transistor, thus reduce the noise of LNA. Meanwhile it also compensate the gain of the LNA, thus improves the gain flatness. The chip layout has been designed, its area is 0.56×0.53 mm2. The simulation results of the LNA demonstrate that in the range of UWB, the noise figure is reduced 2 dB compared with the case without noise canceling, the gain is 16.4∼17.4, gain flatness is ±0.5dB, linearity is •6dBm.