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Comparison of multiple-polysilicon-nanowire pH-sensors coated with different ALD-deposited high-k dielectric materials

机译:涂有不同ALD沉积的高k介电材料的多多晶硅纳米线PH传感器的比较

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Multiple poly-silicon nanowires (PS-NW's) coated with different high-k dielectric materials, HfO2, Al2O3, and TiO2, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW's fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (y-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO2 exhibits the highest sensitivity and best reproducibility for pH sensing.
机译:涂有不同高k介电材料的多个多晶硅纳米线(PS-NW),HFO 2 ,AL 2 O 3 和TIO 2 并进行制造,并比较它们的pH感测特性。侧壁间隔物形成技术用于PS-NW的制造,并通过原子层沉积(ALD)沉积所有高k材料。在高k介电沉积之后,将3-氨基丙基三乙氧基硅烷(Y-Aptes)层涂覆为传感膜。发现涂有HFO 2 的多个PS-NW传感器表现出最高的敏感性和对pH感测的最佳再现性。

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