Continuous Heat Run Test of Latest Generation Power Modules for 10 kV 4H-SiC MOSFETs in Medium Voltage Power Converters

摘要

Heat run test of a power module at the rated operating conditions is an essential qualifications step before employing it in practical applications. Owing to inherent high switching frequency capability and small losses, the 10 kV 4H-SiC Power MOSFETs have potential to replace traditional high voltage silicon power devices in medium voltage power converters. Recently, a high voltage power module has been developed for packaging of these MOSFETs considering high isolation voltage requirement and high dv/dt associated during switching. Characterization of these modules for switching and conduction losses in pulse test mode has been reported earlier. In this work, the heat run test of these modules in four widely used converter topology is performed. Intrinsic body diodes of the 10 kV MOSFETs are used as anti-parallel diodes in the voltage source converter (VSC) test benches. Parasitic in the converter is modeled to validate the experimental waveform. Successful heat run qualification of these 10kV SiC MOSFET modules without any external anti-parallel diodes in the VSCs at medium voltage is demonstrated. It will pave their employment in medium voltage applications.