Low-FOM planar MOSFET

摘要

Low FOM (Figure-of-merit) planar MOSFET is presented in this paper. The p-base of the developed MOSFET is formed by self-aligned ion implanted. Only four masks is used to fabrication while the performance of the developed MOSFET is better than the present conventional MOSFET. The optimized 20V rated MOSFET exhibits about 7.8mΩ·mm~2 specific on-resistance, 1.2nC·mm~2 and 3.4 nC·mm~2 gate-drain charge and gate charge respectively. There is a reduction of 57% in the Figure of Merit.