Super Barrier Rectifier Diodes Offer High-Performance and High- Reliability in Low Voltage Applications

摘要

Super Barrier Rectifier diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for majority carriers, therefore SBR's forward bias operation at low voltage are similar to Schottky diodes. However, the leakage current is lower than Schottky diode in reverse bias due to the overlap of P-N depletion layers and the absence of potential barrier reduction due to the image charge. The underlying concept of the technology is presented and supported by laboratory test results demonstrating the superior performance of SBR over Schottky diode.