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PREPARATION AND HIGH VISIBLE-LIGHT-INDUCED PHOTOCATALYTIC ACTIVITY OF CDSE AND CDSE-C_(60) NANOPARTICLES

机译:CDSE和CDSE-C_(60)纳米粒子的制备和高可见光诱导的光催化活性

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Semiconductor oxides have been widely used in optical coating and microelectronics devices; their use to purify contaminants in air and water has been recognized more recently [1]. Photocatalytic reactions in semiconductors, such as splitting of water and decomposition of waste materials, have received special attention because of their possible application to the conversion of solar energy into chemical energy and to pollution control using solar energy [2]. In these investigations, various semiconductor materials such as TiO2, CdS, ZnS, ZnO, and WO3 have been used to study photocatalytic reduction of pollution in water [3], Photosensitization of stable, large-band gap semiconductors such as SnO2, TiO2, and ZnO in visible light using semiconducting photosensitizers such as CdS, CdSe, and CdTe has been a long-sought, ongoing goal in the area of photoelectrochemical solar-energy conversion. Fullerenes contain an extensively conjugated three-dimensional n system and can be described as having a closed-shell configuration consisting of 30 bonding molecular orbitals with 60 π-electrons. This material is also suitable for efficient electron-transfer reduction because of the minimal changes in structure and solvation associated with electron transfer [4], Cadmium selenide (CdSe) is an n-type semiconductor. Its bandgap energy is reported to be in the range from 1.65 to 1.8 eV. CdSe has been found to be suitable for various optoelectronic applications such as light-emitting diodes, laser diodes, catalysis, solar cells, and biological labeling.
机译:半导体氧化物已广泛用于光学涂层和微电子器件中;他们用来纯化空气和水中的污染物最近已经认识到[1]。半导体中的光催化反应,例如水分裂和废料分解,由于它们可能在太阳能转换为化学能和使用太阳能的污染控制而获得特别关注,因此得到了特别的关注[2]。在这些研究中,已经使用各种半导体材料,例如TiO 2,Cds,Zn​​S,ZnO和WO3,用于研究水中污染的光催化减少[3],稳定的大带间隙半导体如SnO2,TiO 2和使用半导体光敏剂如CD,CDSE和CDTE等可见光的ZnO已经是光电化学太阳能转换领域的长寻求持续的目标。富勒烯含有广泛的缀合的三维N系统,可以被描述为具有由具有60π-电子的30个键合分子轨道组成的闭合壳构型。该材料也适用于有效的电子转移,因为与电子转移相关的结构和溶剂的变化最小,[4],硒化镉(CDSE)是N型半导体。据报道,其带隙能量为1.65至1.8eV的范围。已发现CDSE适用于各种光电应用,例如发光二极管,激光二极管,催化,太阳能电池和生物标记。

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