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BENCHMARKING ASSEMBLY MATERIALS FOR VERTICALLY ALIGNED CARBON NANOTUBES INTO MICROSYSTEMS

机译:用于垂直将碳纳米管的基准组装材料进入微系统

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Carbon nanotubes (CNTs) have attracted much interest in various applications, thanks to their unique thermal, electrical, and mechanical properties [1]. In the field of electronics packaging, vertically aligned CNT (VA-CNT) structures have been utilized as electrical interconnects [2] and thermal interface materials [3] because of the good electrical and thermal conduction in the vertical direction. The most common applied method to fabricate VA-CNT structures is chemical vapor deposition (CVD). During CVD of CNTs, the substrate normally needs to be heated up to a high temperature (~ 600-800 °C), which is unfortunately incompatible with many temperature-sensitive devices and materials in electronics. Different methods were developed to solve this problem. It is possible to lower the growth temperature by for example using plasma-enhanced CVD [4]. However the growth rate and quality are normally significantly deteriorated at lower temperature. It was also demonstrated that CNTs could be grown from locally heated micro-scale heaters [5] but this method adds extra complexity to fabricate and connect the micro heaters. Therefore post-growth techniques have been proposed to transfer CNTs from an original growth substrate to a target substrate at a low temperature. Different assembly materials were used for this purpose, including for example solders [6] and conductive adhesives [7]. In this work we present a benchmarking study of assembly materials for the integration of VA-CNTs, aiming at comparing the electrical and mechanical performance of different assembled CNT structures. Three different materials, including an isotropic conductive adhesive (ICA), an anisotropic conductive adhesives (ACA), and a solder alloy, were used in the assembly of CNTs and compared.
机译:由于其独特的热,电气和机械性能,碳纳米管(CNT)吸引了各种应用的兴趣很大。在电子包装领域中,由于垂直方向上的良好的电气和热导通,垂直对准的CNT(VA-CNT)结构已被用作电互连[2]和热界面材料[3]。制造VA-CNT结构的最常见的应用方法是化学气相沉积(CVD)。在CNT的CVD期间,通常需要加热到高温(〜600-800°C)的基材,这是不幸的,这与许多温度敏感的装置和电子产品中的材料不相容。开发了不同的方法来解决这个问题。通过例如使用等离子体增强的CVD [4]可以降低生长温度。然而,在较低温度下,生长速率和质量通常显着恶化。还有表明CNT可以从本地加热的微刻度加热器生长[5],但该方法增加了额外的复杂性来制造和连接微加热器。因此,已经提出了后生长技术以在低温下将CNT从原始生长衬底转移到靶衬底。为此目的使用不同的组装材料,包括例如焊料[6]和导电粘合剂[7]。在这项工作中,我们提出了一种用于集成VA-CNT的集装材料的基准研究,旨在比较不同组装的CNT结构的电气和力学性能。在CNT的组装中使用三种不同的材料,包括各向同性导电粘合剂(ICA),各向异性导电粘合剂(ACA)和焊料合金。

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