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Behavior of Surface Flashover Depending on Gap Distance of End Shield in Vacuum Interrupter

机译:表面闪光灯的行为取决于真空中间屏蔽的间隙距离

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摘要

In this paper, 3 types of models were used to analyze maximum E field of each model and the influence of shape of shield could be identified. As a result, proposed L type shield could reduce the maximum E field by 20%. Secondly, the influence of the gap distance between end shields on E field was analyzed. As the gap distance become short the gap distance between inner walls of ceramic also become short. And the maximum E field concentrated on inner wall of ceramic finally increased. It is thought that the deterioration of dielectric strength in VI can be acquired if the creepage distance is sufficient. Thirdly, the experiment was conducted by fabricating each prototype. As a result, no creepage occurred in shieldless model. In other words, creepage occurred in the shield-installed models. And creepage inception voltages were different from each other because of the difference of maximum E field. Fourthly, The equation that shows relation between calculated E field and measured creepage inception voltage was proposed as a result of FEM analysis and experiment.
机译:在本文中,使用3种模型来分析每个模型的最大E场,并且可以识别屏蔽形状的影响。结果,提出的L型屏蔽可以将最大E场缩小20%。其次,分析了E场在E场之间的间隙距离的影响。由于间隙距离变短,陶瓷内壁之间的间隙距离也变短。并且集中在陶瓷内壁上的最大E场最终增加。据认为,如果爬电距离足够,则可以获得VI中介电强度的劣化。第三,通过制造每个原型来进行实验。结果,屏蔽模型中没有发生爬电。换句话说,爬电器发生在屏蔽安装的模型中。由于最大E场的差异,爬电成立电压彼此不同。第四,提出了所计算的e场与测量爬电成立电压之间的等式作为有限元分析和实验。

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