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Behavior of Surface Flashover Depending on Gap Distance of End Shield in Vacuum Interrupter

机译:取决于真空灭弧室端罩间隙距离的表面闪络行为

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摘要

In this paper, 3 types of models were used to analyze maximum E field of each model and the influence of shape of shield could be identified. As a result, proposed L type shield could reduce the maximum E field by 20%. Secondly, the influence of the gap distance between end shields on E field was analyzed. As the gap distance become short the gap distance between inner walls of ceramic also become short. And the maximum E field concentrated on inner wall of ceramic finally increased. It is thought that the deterioration of dielectric strength in VI can be acquired if the creepage distance is sufficient. Thirdly, the experiment was conducted by fabricating each prototype. As a result, no creepage occurred in shieldless model. In other words, creepage occurred in the shield-installed models. And creepage inception voltages were different from each other because of the difference of maximum E field. Fourthly, The equation that shows relation between calculated E field and measured creepage inception voltage was proposed as a result of FEM analysis and experiment.
机译:本文使用3种模型来分析每个模型的最大E场,并可以识别出盾构形状的影响。结果,建议的L型屏蔽可将最大E场减小20%。其次,分析了端盖之间的间隙距离对电场的影响。随着间隙距离变短,陶瓷内壁之间的间隙距离也变短。最终集中在陶瓷内壁上的最大电场增大。据认为,如果爬电距离足够,则VI中的介电强度会下降。第三,通过制造每个原型进行实验。结果,在无屏蔽模型中没有发生爬电。换句话说,在安装有屏蔽的型号中会发生爬电。由于最大电场的差异,爬电起始电压互不相同。第四,作为有限元分析和实验的结果,提出了方程,该方程表示了计算出的电场和测得的爬电起始电压之间的关系。

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