Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

摘要

Comparative study is performed for characterizing few-walled carbon nanotube field-effect transistors (FWCNTFETs) using the extended compact circuit modeling technique, with their capacitive parasitic effects as well as input-output responses obtained. In particular, screening effects in the FWCNT array, the influences of doping resistances, Schottky-barrier (SB) resistances, and parasitic capacitances are all examined numerically. The performance of triple-walled CNTFET (TWCNTFETs) is compared with single- and double-walled geometries (SWCNTFET & TWCNTFET). It is found that, with respect to DWCNTFET counterpart, the triple-walled geometry has slight improved total current, but longer delay time, lower cutoff frequency, and more complex fabrication technology has to be implemented for its realization.