V_(th)-Control Method in Double Gate Field Effect Transistor Domino Circuits

摘要

In this paper we investigate the possibility of power reduction in DGFET devices by means of V_(th) control technique applied for domino logics. Previously the effectiveness of V_(th) control method by means of back gate biasing has been investigated. In this paper we show that by special using back gate to control the threshold voltage we can save not only significant standby power but even considerable dynamic power for domino circuits while preserving their speed. Comparing V_(th) control method with the conventional double gate scheme and a recently published successful work, showed the performance of this method. It is shown that the performance of this method will be better in higher temperatures. Simulations were done by HSPICE circuit simulator using DGFET PTM model.