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Using Charge Self-compensation Domino Full-adder with Multiple Supply and Dual Threshold Voltage in 45nm Technology

机译:在45nm技术中使用电荷自补偿多米诺全加法器具有多种电源和双阈值电压

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摘要

A charge self-compensation technique, based on P-type logic dynamic node charging to N-type logic dynamic node, is proposed in this paper. A novel Zipper CMOS domino full-adder is implemented using this technique, dual threshold voltage technique, and multiple supply technique for power reduction. A power distribution simulation running indicates that the active power of the implemented full-adder can be reduced by up to 37%, 5% and 7%, and its leakage power can be reduced by up to 41%, 20% and 43% as compared to the standard, the dual threshold voltage, and the multiple supply Zipper CMOS domino full-adder with similar delay time, respectively. At last, the influence of the combination idle state determined by inputs and clock signals on the leakage current is analyzed and the optimal idle state is obtained.
机译:本文提出了一种基于P型逻辑动态节点对n型逻辑动态节点的电荷自补偿技术。使用该技术,双阈值电压技术和多种供电技术实现了一种新型拉链CMOS Domino全加法器。配电仿真运行表明,实现的全加法器的有功功率可以减少高达37%,5%和7%,其泄漏功率可降低41%,20%和43%与标准,双阈值电压和多个电源拉链CMOS Domino全加法分别相比,分别具有相似延迟时间。最后,分析了通过输入和时钟信号确定的组合空闲状态的影响,并获得最佳空闲状态。

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