Using Low-k Oxide for Reduction of Leakage Current in Double Gate Tunnel FET

摘要

In order to enhance I_(on)/I_(off) ratio in the Double Gate Tunneling Field Effect Transistor (DG-TFET), employing a double gate structure has been investigated. Furthermore by employing a low-k oxide for the gate near the drain side (Gate2) fringing field effects are suppressed. Hence, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gatei) to further reduce the off state current.